The physical, thermodynamic, heat-transfer, and cleaning properties of hydrofluorocarbons (HFCs) make them ideal for a wide range of applications including refrigeration and semiconductor manufacturing. HFCs do not contain chlorine, do not deplete the stratospheric ozone layer, and are low in toxicity.

Refrigeration applications rely on HFCs to comply with Montreal Protocol requirements to replace ozone-depleting CFCs and HCFCs in cooling, freezing, or other heat transfer processes. HFCs are energy-efficient, cost-effective, re-useable and very versatile.
To meet specific temperature requirements, HFCs are often used in gas blends.

HFC-32 has been approved as a component in HFC blends for refrigeration systems based on safety, environmental profile, and excellent technical performance. HFC-32 is often used in blends such as R-410A which is the leading replacement for HCFC-22 refrigerant in residential and commercial air conditioners.

HFC-23 has been approved as a high-pressure refrigerant for applications requiring very low temperatures. Typical applications include industrial refrigeration systems, medical applications, high-vacuum chambers, test chambers, and as a replacement for R13.

In addition to commercial success as refrigerants, both HFC-32 and HFC-23 are available as high-purity electronic grade gases for plasma-etch processes in semiconductor manufacturing. Our high-purity HFCs are an ideal source of reactive fluorine atoms for plasma etching.

Both HFC-32 and HFC-23 offer a wide degree of control over the etching process which is critical in thin film etching for today's advanced applications. Our HFCs are often used in combination or with other gases to optimize performance in terms of etch rate, etch profile, and selectivity of a specific process.

HFC-32, difluoromethane, is produced in high-purity grade for plasma etching. The unique hydrogen-to-fluorine ratio of HFC-32 enables it to be used in several emerging processes for etching silicon based dielectrics.

HFC-23, trifluoromethane, is often used as a component in various gas recipes for etching of silicon dioxide dielectric layers. It can be used in combination with HFC-14 and HFC-116 to improve etch rate, selectivity, and uniformity.

Please click on the appropriate technical datasheet for more information:

• HFC-32 also known as difluoromethane is shipped as liquefied pressurized gas.

• HFC-23 also known as trifluoromethane is shipped as liquefied pressurized gas.